Parametr

min

typ

max

Uwagi: t_a = 25°C

P max

mW

300

Podobne:

KT312.BF520,

BF521

U ma*

mA

50

Ib rruuc

mA

5

UcEOma*

V

50

Uc80max

V

70

UgBOmax

V

5

UcEO (BR)

V

50

Iceo =10 mA

UcBO(BR)

V

70

Icso = 10 jiA

UebO (BR)

V

5

8.5

Iebo = 10 pA

UcE sal

V

0.1

0.5

l_c = 20 mA, l_B = 2 mA

UfiEsat

V

0.8

1.0

l_c = 20 mA, l_B = 2 mA

h₂,E (II)

(III)

(V)

(VI)

20

35

lc= 10 mA U_CE = 6 V

30

90

70

170

150

h₂ia

20

75

200

l_c= 10 mA, U_Ce = 6 V

hiie

kfl

0.8

lc = 2 mA Uce = 5 V f_p = 1 kHz

hi2e

itr*

0.6

h₂io

50

h22e

pS

6

f_T

MHz

150

270

l_c = 5mA, U_C£ = 10 V

IcBO

pA

2

100

Ucbo = 6 V

BF 245, Jfet. kanał N, epitaksjalno-planarny "

Parametr

min.

typ

max

Uwagi: t, = 25°C

P max

mW

360

loss

mA

2

25

Uds = 15 V, Uqs ⁼ 0

lass

nA

-5

Ugs ⁼ "20, Uds = 0

Ugss

V

-30

Ig = "1 nA, Uds ⁼ 0

UoSmsx

V

±30

UoGma*

V

30

Ig max

mA

10

U_p /A/ IB/ ICI

V

-0.4

-2.2

Idss=2+6,5 mA, U_DS=15 V, lo=200 pA

V

-1.6

-3.8

Idss=6+15 mA, U_os = 15 V, l_D=200 |iA

V

-3.2

-7.5

I_dss=12+25 mA, U_os = 15 V, l_o=200 PA

9m

mS

3

5.5

6.5

Uos = 15 V, loss. fp = 1 kHz

9d

pS

70

U_DS = 20 V. U_GS = -1 V, f_p = 100 MHz

g*

SMY 50, MOS FET, Kanał P, wzbogacony, wyprowadzone podłoże

Parametr

min.

typ

max

Uwagi: t, = 25°C

Pma*

mW

225

Idss

pA

-10

U_DS = -31 V, U_GS = 0, U_SB = 0

less

PA

-10

Uds = 0, U_QS = -31 V, U_S8 = 0

^DS max

V

+0.3

-31

UGSmax

V

+0.3

-31

UoG max

V

+31

-31

UGB ma*

V

+0.3

-31

UoBmaa

V

+0.3

-31

I-I SB ma*

V

+0.3

-15

Id max

mA

-25

Ig max

mA

0.1

Ugsaw

V

3

l_D = 10 pA, Uos = Ugs, Ubs = 0

^rOS/OMf

n

150

|₀= 100 pA, Uqs = -20 V

9m

mS

3.6

Uos = U_GS = -10 V, (_p = 1 kHz