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EX.2. Structural transformation of nano-GaN under high pressure

High pressure treatment of nanocrystalline GaN leads to transformations In its połytype strueture. A simple model of introduction of stacking faults by random shifts of OOlh planes was used for simułation of strain-mduced ₌ disordering process in nanocrystals. J High pressure treatment up to | 20GPa in Diamond Anvil Celi (DAC) chan ges reiativeintensities of peaks, increases intensity between the peaks. It is caused by structural transformation: stacking faults evolution.

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