Experiment, DAC Simulation
UeN. IICIJA. higl- preis .'5 C£\. jrain J łSUA n liierete'
• Simulations of X-Ray
diffraction patterns conceming mentioned model were madę for GaN grain of 160A in diameter. 0, 0.2, 0.4, 0.8, and 1.2 shiffcs per layer were applied. Remarkabły similar patterns were obtained, eomparing to experimental high-pressnre measurements of nano-GaN.