Laboratorium Elektroniki cz I 2

Parametr

min

typ

max

Uwagi: t_a = 25°C

Pmax

mW

300

Podobne:

KT312.BF520,

BF521

U max

mA

50

Ib max

mA

5

U CEO max

V

50

UcBOmax

V

70

UebO max

V

5

UcEO (BR)

V

50

Iceo =10 mA

UcBO (BR)

V

70

Icbo =10 |iA

UeBO (BR)

V

5

8.5

Iebo =10 pA

UcE sal

V

0.1

0.5

l_c = 20 mA, l_B = 2 mA

U BE sal

V

0.8

1.0

l_c = 20 mA, l_B = 2 mA

h_21E (ID (III)

(V)

(VI)

20

35

l_c = 10 mA Uce = 6 V

30

90

70

170

150

^21 a

20

75

200

l_c= 10 mA, U_CE = 6 V

hii_e

kn

0.8

l_c = 2 mA U_CE = 5 V f_p = 1 kHz

hi2e

10*⁴

0.6

h21e

50

^22e

M-S

6

f_T

MHz

150

270

l_c = 5 mA, Uce = 10 V

IcBO

mA

2

100

Ucbo = 6 V

Parametr

min.

typ

max

Uwagi: t_a = 25°C

D

^r max

mW

360

Idss

mA

2

25

U_DS = 15 V, Uqs = 0

Igss

nA

-5

Ugs = "20, Uqs = 0

Ugss

V

-30

Ig = -1 pA, U os = 0

Uqs max

V

±30

UoGmax

V

30

Ig max

mA

10

U_p IM

V

-0.4

-2.2

Idss=2-6,5 mA, Uos=15 V, Iq=200 pA

/BI

V

-1.6

-3.8

loss=6+15 mA, U_DS = 15 V, l_D=200 pA

ICI

V

-3.2

-7.5

Idss= 12-25 mA, Uo$ = 15 V, Iq=200 pA

9 m

mS

3

5.5

6.5

Uds = 15 V, Idss. fp = 1 kHz

9d

MS

70

U_DS = 20 V, Ugs = -1 V, fp = 100 MHz

9ds

SMY 50, MOS FET, Kanał P, wzbogacony, wyprowadzone podłoże

Parametr

min.

typ

max

Uwagi: t, = 25°C

P max

mW

225

Idss

rA

-10

U_DS = -31 V. U_GS = 0, U_SB = 0

Igss

hA

-10

U_DS = 0, U_QS = -31 V, U_S0 = 0

UoSmax

V

+0.3 .

-31

U GS max

V

+0.3

-31

UDGmax

V

+31

-31

UGBmax

V

+0.3

-31

UDBmax

V

+0.3

-31

U SB max

V

+0.3

-15

lomax

mA

-25

Ig max

mA

0.1

UcSAh/

V

3

l_D = 10 pA, Uos = Uqs. Ubs = 0

^rDS/ON/

n

150

I_d=100hA, Ugs = '20 V

9m

mS

3.6

Uos = U_Gs = -10 V, f_p = 1 kHz